Analysis and Design of Finfet Based Variable Gain Amplifier
نویسندگان
چکیده
Comparison of analog figures-of-merit of FinFETs and MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over MOSFETs: reduced power dissipation, and better voltage gain without degradation of noise or linearity. This makes them attractive for low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs is seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs.
منابع مشابه
Improving Linearity of CMOS Variable-gain Amplifier Using Third-order Intermodulation Cancellation Mechanism and Intermodulation Distortion Sinking Techniques
This paper presents an improved linearity variable-gain amplifier (VGA) in 0.18-µm CMOS technology. The linearity improvement is resulted from employing a new combinational technique, which utilizes third-order-intermodulation (IM3) cancellation mechanism using second-order-intermodulation (IM2) injection, and intermodulation distortion (IMD) sinking techniques. The proposed VGA gain cell co...
متن کاملAnalysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts
In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high ...
متن کاملAnalysis and design of a CMOS current reused cascaded distributed amplifier with optimum noise performance
In this paper, analysis, simulation and design of a distributed amplifier (DA) with 0.13µm CMOS technology in the frequency range of 3-40 GHz is presented. Gain cell is a current reused circuit which is optimum in gain, noise figure, bandwidth and also power dissipation. To improve the noise performance in the frequency range of interest, a T-matching low pass filter LC network which is utilize...
متن کاملEffective Design of a 3×4 Two Dimensional Distributed Amplifier Based on Gate Line Considerations
In this paper two dimensional wave propagation is used for power combining in drain nodes of a distributed amplifier (DA). The proposed two dimensional DA uses an electrical funnel to add the currents of drain nodes. The proposed structure is modified due to gate lines considerations. Total gain improvement is achieved by engineering the characteristic impedance of gate lines and also make appr...
متن کاملDesign, Analysis and Simulation of a Linear Phase Distributed Amplifier
In this paper a new method for the design of a linear phase distributed amplifier in 180nm CMOS technology is presented. The method is based on analogy between transversal filters and distributed amplifiers topologies. In the proposed method the linearity of the phase at frequency range of 0-50 GHz is obtained by using proper weighting factors for each gain stage in cascaded amplifier topology....
متن کامل